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Browsing by Author "Fu, Shao-Fu"

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    Optical properties associated with strain relaxations in thick InGaN epitaxial films
    (2014-03-10)
    Tsai, Wen-Che
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    Hsu, Chia-He
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    Fu, Shao-Fu
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    Lee, Fang-Wei
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    Chen, Chin-Yu
    Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed. (C)2014 Optical Society of America
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    Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
    (2009-03-01)
    Chen, Ching-Yu
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    Lee, Ling
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    Tai, Shin-Kai
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    Fu, Shao-Fu
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    Ke, Wen-Cheng
    Photoluminescence (PL) measurements were employed to investigate the emission properties of uncapped InN nanodot samples grown at temperature from 550 to 725 degrees C. Our results indicate that once the In droplets are formed, the optical properties of InN dots deteriorate markedly. As for those droplet-free samples grown at temperatures >= 600 degrees C, good luminescence properties are obtained. The corresponding 20 K PL peak energy is found to be almost constant at approximately 0.77 eV with a slow increase in its linewidth from 71 to 74 meV. A strong temperature-induced energy blue shift at approximately 20 to 280 K is considered to be partially connected to the band-filling effects of thermally stimulated surface electrons. (C) 2009 The Japan Society of Applied Physics