Browsing by Author "GANIKHANOV, F"

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COMPLETELY SELF-STARTING PICOSECOND AND FEMTOSECOND KERR-LENS MODE-LOCKED TI-SAPPHIRE LASER
(1995-05-01)
SHIEH, JM
;
GANIKHANOV, F
;
LIN, KH
;
HSIEH, WF
;
PAN, CL
Completely self-starting and stable operation of a Kerr-lens mode-locked Ti:sapphire laser was realized in both picosecond and femtosecond regimes. The cavity has a symmetric X configuration with soft aperturing. Enhanced Kerr nonlinearity and reduced backscattering effects were thought to be key to obtaining stable self-starting self-mode-locked operation from 765 to 815 nm far the picosecond regime and from 770 to 835 nm for the femtosecond regime. The mode-locking starting time as measured by the onset of the second-harmonic signal ranged from 300 ms to 2 s, depending on cavity alignment. Preliminary data also suggest that intracavity intensity fluctuation necessary for the laser to evolve into stable mode locking could be as short as 10-40 ps.
SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS
(1995-12-04)
GANIKHANOV, F
;
LIN, GR
;
CHEN, WC
;
CHANG, CS
;
PAN, CL
We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.