Browsing by Author "Gan, Jon-Yiew"

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Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology
(2020-03-01)
Peng, Yin-Wei
;
Chen, Chun-Heng
;
Li, Li-Yu
;
Hsin, Pi-Yu
;
Yu, Peichen
In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 x 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm(2), and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (tau(bulk) >= 10 ms) or low resistivity (rho <= 1 omega center dot cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.
High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein
(2015-09-01)
Chen, Shih-Han
;
Liu, Hung-Chuan
;
Lee, Chun-Yi
;
Gan, Jon-Yiew
;
Zan, Hsiao-Wen
Device performance of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) has been improved greatly by using bovine serum albumin (BSA) as the top gate dielectric. BSA is a natural protein with acidic and basic amino acid residues, which is easily hydrated in air ambient. A typical a-IGZO TFT with hydrated BSA as the top gate dielectric exhibits a field-effect mobility (mu(FE)) value of 113.5 cm(2) V-1 s(-1) in saturation regime and a threshold voltage (V-TH) value of 0.25 V in air ambient. The excellent device performance can be well explained by the formation of electric double layers (EDLs) near the interfaces of a-IGZO/hydrated BSA and hydrated BSA/gate electrode. The reliability issue of a-IGZO TFTs gated with hydrated BSA has been also investigated by using the life time test without encapsulation. The V-TH value increases and mu(FE,sat) value reduces slightly for the a-IGZO TFT and remain stabilized over 60 days. (C) 2015 Elsevier B.V. All rights reserved.
Improved Rear-Side Passivation by Atomic Layer Deposition Al2O3/SiNx Stack Layers for High V-OC Industrial p-Type Silicon Solar Cells
(2013-09-01)
Lin, Je-Wei
;
Chen, Yi-Yang
;
Gan, Jon-Yiew
;
Hseih, Wei-Ping
;
Du, Chen-Hsu
This research develops high open-circuit voltage (V-OC) p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (<450 degrees C) thermal atomic layer deposition of Al2O3 layers and plasma-enhanced chemical vapor deposition of SiNx passivation layers. An increase in the V-OC and the short-circuit current (J(SC)) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm(2)) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.
Thermal Stability and Performance of NbSiTaTiZr High-Entropy Alloy Barrier for Copper Metallization
(2011)
Tsai, Ming-Hung
;
Wang, Chun-Wen
;
Tsai, Che-Wei
;
Shen, Wan-Jui
;
Yeh, Jien-Wei
Development of better diffusion barriers for Cu metallization is one of the key issues for the microelectronics industry. Although metallic diffusion barriers offer many advantages, their application is hindered due to their inferior thermal stability relative to ceramic barriers. Here we report on a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barriers. The outstanding performance of NbSiTaTiZr is due to its better structural and chemical stability at high temperatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.056111jes] All rights reserved.