Browsing by Author "Gao, Run-Ci"

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Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions
(2008)
Wang, Te-Chung
;
Ko, Tsung-Shine
;
Lu, Tien-Chang
;
Kuo, Hao-Chung
;
Gao, Run-Ci
We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium, compositions, we concluded that without piezoelectric field, high indium. content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium. composition about 30% so that the photoluminescence intensity of the sample 810 degrees C low down and spectrum bandwidth broaden.