Browsing by Author "Gapsari, F."

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Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
(2019-01-01)
Simanjuntak, F. M.
;
Chandrasekaran, S.
;
Gapsari, F.
;
Tseng, T. Y.
;
材料科學與工程學系
This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.