Browsing by Author "Ge, CH"

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Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain
(2005)
Lin, HN
;
Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
Channel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory We found that both the backscattering ratio and injection velocity are greatly influenced by the location and recess depth of SiGe source/drain. Although the strain-enhanced injection velocity is beneficial to the current gain, the accompanying backscattering ratio increase adversely impacts the overall performance, and therefore a trade-off exists between injection velocity and backscattering ratio during the optimization of such strain technique. The mechanism of increased backscattering ratio under uniaxial compressive strain is also investigated.
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
(2005-09-01)
Lin, HN
;
Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms,of ballistic efficiency and injection velocity.
The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs
(2005)
Lin, HN
;
Chen, HW
;
Ko, CH
;
Ge, CH
;
Lin, HC
The influence of uniaxial process-induced strain on carrier channel backscattering in nanoscale MOSFETs is reported for the first time. It is observed that the backscattering ratio can be reduced by uniaxial tensile strain while it is increased by uniaxial compressive strain mainly due to strain-induced modulation in mean-free-path for backscattering and slight decrease in k(B)T layer thickness. Nevertheless, both strain polarities improve source-side injection velocity because of reduced carrier effective mass. Impact to current drive under uniaxial strain is analyzed in terms of mean-free-path, k(B)T layer thickness, ballistic efficiency and injection velocity.