Browsing by Author "Gong, J."

Now showing 1 - 4 of 4

MULTI-LEVEL OPERATION OF FULLY CMOS COMPATIBLE WOX RESISTIVE RANDOM ACCESS MEMORY (RRAM)
(2009)
Chien, W. C.
;
Chen, Y. C.
;
Chang, K. P.
;
Lai, E. K.
;
Yao, Y. D.
The multi-level operation of WOX based RRAM has been investigated. Improvement of our WOX process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
The Impact of TiN Barrier on the NBTI in an Advanced High-k Metal-gate p-channel MOSFET
(2017-01-01)
Huang, D. -C.
;
Hsieh, E. Ray
;
Gong, J.
;
Huang, C. -F.
;
Chung, Steve S.
This study investigates the bias temperature instability in high-k/metal-gate pMOSFETs with a TiN barrier layer sandwiched between the metal gate electrode and HfO2 dielectric and for reliability improvement of such devices. The experimental results clearly demonstrated that the diffusion mechanism of oxygen and nitrogen resulting from the post metallization treatment was the root cause of bias temperature instabilities in the p-channel MOSFETs. However, the device NBTI reliability is dependent on the nitrogen diffusion from the TiN layer, which degrades the SiO2/Si interfacial layer quality. Results show that by increasing the thickness of TiN barrier layer, the driving current will make worse the NBTI in p-MOSFET. Therefore, optimization needs to be considered for TiN as a barrier to improve the device reliabilities.
Unipolar Switching Behaviors of RTO WO(X) RRAM
(2010-02-01)
Chien, W. C.
;
Chen, Y. C.
;
Lai, E. K.
;
Yao, Y. D.
;
Lin, P.
The microstructure and electrical properties of the WO(X)-based resistive random access memory are investigated in this letter. The WO(X) layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WO(X) layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
Unipolar Switching Behaviors of RTO WOX RRAM
(2010-02-01)
Chien, W. C.
;
Chen, Y. C.
;
Lai, E. K.
;
Yao, Y. D.
;
Lin, P.
The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.