Browsing by Author "Gong, Jeng"

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Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors
(2015-04-01)
Huang, Da-Cheng
;
Gong, Jeng
;
Huang, Chih-Fang
;
Chung, Steve S.
;
電子工程學系及電子研究所
This study examined the impact of positive bias temperature instability (PBTI) on n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) with TiN barrier layer sandwiched between metal gate electrode and HfO2 dielectric. The experimental results clearly demonstrate that the diffusion mechanism of oxygen and nitrogen as a result of the post metallization treatment was the root cause of the PBTI. In this mechanism, the oxygen during the post metallization annealing (PMA) was diffused into TiN layer and replaced the nitrogen in the TiN layer. Subsequently, these replaced nitrogens were diffused into the HfO2, from which these replaced nitrogen atoms were used to passivate the defects in the HfO2. Results show that by increasing the thickness of TiN barrier layer, the driving current and the PBTI of n-MOSFET can be greatly improved. The larger the thickness of the TiN layer is, the better the PBTI reliability becomes. (C) 2015 The Japan Society of Applied Physics
Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
(2010)
Lai, Erh-Kun
;
Chien, Wei-Chih
;
Chen, Yi-Chou
;
Hong, Tian-Jue
;
Lin, Yu-Yu
A complementary metal oxide semiconductor (CMOS)-compatible WO(x) based resistive memory has been developed. The WO(x) memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO(x) resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics