Browsing by Author "Goto, Ken-Ichi"

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Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs
(2008-09-01)
Chen, William Po-Nien
;
Su, Pin
;
Goto, Ken-Ichi
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.
Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
(2009)
Chen, William Po-Nien
;
Su, Pin
;
Goto, Ken-Ichi
;
Diaz, Carlos H.
;
電子工程學系及電子研究所
This paper presents a BSIM-based method for source/drain series resistance and mobility extraction in nanoscale strained-silicon metal oxide semiconductor field effect transistors (MOSFETs) with halo implants. This method is more accurate than the conventional channel-resistance and shift and ratio method because it considers the gate-length dependence of mobility caused by local uniaxial stress and laterally nonuniform channel doping. We have verified this method using samples with different stressor/doping conditions and good agreement with experimental data has been obtained. The accuracy of the Berkeley Short-channel IGFET model (BSIM) R(sd) extraction method is also proven by simulated current-voltage characteristics with different external resistant values. Significant mobility degradation in the short-channel regime has been observed for various uniaxial stressors. This method may serve as a suitable process monitor tool for ultrashallow junction and strained process development.