Browsing by Author "Gritsenko, Vladimir"

Now showing 1 - 2 of 2

All Nonmetal Resistive Random Access Memory
(2019-04-16)
Yen, Te Jui
;
Gismatulin, Andrei
;
Volodin, Vladimir
;
Gritsenko, Vladimir
;
Chin, Albert
Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si combination forms a N+IP+ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 x 10(4) was measured at room temperature. A favorable retention memory window of 1.2 x 10(3) was attained for 10(4)s at 85 degrees C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiOx was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence
(2020-02-18)
Yen, Te Jui
;
Chin, Albert
;
Gritsenko, Vladimir
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
All-nonmetal resistive random access memory (RRAM) with a N+-Si/SiNx/P+-Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor deposition (PECVD). The SiNx RRAM device developed using PVD has a large resistance window that is larger than 10(4) and exhibits good endurance to 10(5) cycles under switching pulses of 1 mu s and a retention time of 10(4) s at 85 degrees C. Moreover, the SiNx RRAM device developed using PVD had tighter device-to-device distribution of set and reset voltages than those developed using PECVD. Such tight distribution is crucial to realise a large-size cross-point array and integrate with complementary metal-oxide-semiconductor technology to realise electronic neurons. The high performance of the SiNx RRAM device developed using PVD is attributed to the abundant defects in the PVD dielectric that was supported by the analysed conduction mechanisms obtained from the measured current-voltage characteristics.