Browsing by Author "Guo, Huaxin"

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III-V MOSFETs with a New Self-Aligned Contact
(2010)
Zhang, Xingui
;
Guo, Huaxin
;
Ko, Chih-Hsin
;
Wann, Clement H.
;
Cheng, Chao-Ching
We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.
Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
(2011-05-01)
Zhang, Xingui
;
Guo, Huaxin
;
Lin, Hau-Yu
;
Cheng, Chao-Ching
;
Ko, Chih-Hsin
The demonstration of a salicidelike self-aligned contact technology for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is reported. A thin and continuous crystalline germanium-silicon (GeSi) layer was selectively formed on n(+) doped gallium arsenide (GaAs) regions by epitaxy. A new self-aligned nickel germanosilicide (NiGeSi) Ohmic contact with good morphology was achieved using a two-step annealing process with precise conversion of the GeSi layer into NiGeSi. NiGeSi contact with the contact resistivity (rho(c)) of 1.57 Omega mm and sheet resistance (R(sh)) of 2.8 Omega/square was achieved. The NiGeSi-based self-aligned contact technology is promising for future integration in high performance III-V MOSFETs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3592211]