Browsing by Author "HO Yen-Teng"
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Item type:Item, METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES(2015-01-01) ;CHANG LiHO Yen-TengThe present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process, wherein the non-polar m-plane epitaxial layer may be GaN, or III-nitrides. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.Item type:Item, Non-polar plane of wurtzite structure material(2013-09-19) ;CHANG LiHO Yen-TengThe present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.