Browsing by Author "HOU TUO-HUNG"
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Item type:Item, MULTI-BIT RESISTIVE-SWITCHING MEMORY CELL AND ARRAY(2013-05-16) ;HOU TUO-HUNGWU SHIH-CHIEHThis invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal.