Browsing by Author "HSIEH, TR"

Now showing 1 - 1 of 1

NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
(1991-07-01)
PAN, CL
;
WU, HH
;
HSIEH, TR
;
交大名義發表
;
光電工程學系
We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (lambda = 1.3-mu-m) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10(14) cm-3 for typical commerical wafers 350-mu-m in thickness.