Browsing by Author "HUANG, CK"

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GROWTH OF CEO2 FILMS ON SAPPHIRE AND MGO BY RF MAGNETRON SPUTTERING
(1995-07-01)
TSAIH, WC
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HUANG, CK
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TSENG, TY
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Epitaxial CeO2 films on (1 $($) over bar$$ 102) sapphire and (100) MgO were grown by rf magnetron sputtering, Substrate temperature, total pressure, and oxygen-to-argon mole ratio were varied to explore the optimal deposition condition. The X-ray diffraction spectra indicate that the degree of crystallinity of the deposited CeO2 films depends on the oxygen-to-argon mole ratio and the substrate temperature, Atomic force microscopy images of the films on sapphire and MgO showed that substrate temperature and total pressure affect surface roughness. The best him surface is smooth with a 0.89 nm root-mean-square roughness, The quality of the films on MgO showed a strong dependence on substrate pretreatments, Epitaxial CeO2 films could be grown on preannealed or pre-etched MgO if substrate temperatures reached higher than 790 degrees C, Additionally, the effect of ion bombardment at low total pressures on the crystallinity of the films was examined by growing the films outside the plasma region, Experimental results indicate that the ion bombardment does not prevent the films from preferred orientation.
PRESSURE EFFECT ON YBA2CU3O7 THIN-FILM GROWTH IN OFF-AXIS RADIO-FREQUENCY MAGNETRON SPUTTERING
(1995-09-01)
WU, SC
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TSAI, WC
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HUANG, CK
;
HSU, HT
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HUANG, CJ
YBa2CU3O7-x (123) thin films were fabricated on (100) MgO substrates by off-axis single target radio frequency (rf) magnetron sputtering. Our study focused on the effect of chamber pressure on the composition, microstructure, and superconductive properties on transition behavior and T-c, of the grown him studied. An empirical formula was derived to explain the dependence of the deposition rate of various components on the pressure. Next, we compared the transport mechanism of the sputtered particles between the off-axis rf and the on-axis direct current sputtering and determined the processing conditions that result in superconducting films of better quality. According to our findings, growth at higher pressures (>100 mTorr) produces more homogeneous and higher T-c superconducting films. (C) 1995 American Vacuum Society.