Browsing by Author "HUANG, CT"

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CONTROL APPARATUS FOR SINGLE-CRYSTAL GROWTH IN AQUEOUS-SOLUTION METHOD
(1994-03-01)
SHIE, JS
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HUANG, CT
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交大名義發表
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光電工程學系
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National Chiao Tung University
A new technique has been developed for controlling the crystal-growth rate in the aqueous solution method. This technique provides a programmable preset of the temperature evolution of solution. Initially, the growth rate is kept slow to ensure good crystal quality. Gradually the rate is accelerated to increase the growth efficiency. A simple control mechanism is devised to achieve a very slow and pre-determined cooling rate, which can be adapted to the temperature-related characteristics of various solutions and thermistor sensor. Single crystal growth of KDP has been demonstrated. The result verifies our prediction that a linear growth rate of the crystal dimension with a good seed-to-grown crystal interface can be obtained programmatically.
THE IMPACT OF TITANIUM SILICIDE ON THE CONTACT RESISTANCE FOR SHALLOW JUNCTION FORMED BY OUT-DIFFUSION OF ARSENIC FROM POLYSILICON
(1993-01-01)
YANG, WL
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LEI, TF
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HUANG, CT
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LEE, CL
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電子工程學系及電子研究所
A novel technology of Ti-polycided shallow junctions formed by out-diffusion of As+ from polysilicon was proposed and investigated. Junction depth as shallow as 0.1 mum and leakage current density as small as 0. 4 nA/cm2 can be easily obtained by this process. Contact resistance measurements show that the presence of a deliberately grown interfacial oxide leads to a significant increase in the contact resistance and small values of the specific contact resistivity (4 approximately 7 x 10(-7) OMEGA-cm2) can be obtained if Ti thicknesses are larger than half of polysilicon thicknesses. This is due to the polysilicon layer had been consumed completely and the interfacial oxide would be broken under the silicidation process. This implies that the contact resistance is mainly determined by the polysilicon/mono-silicon interface property and it is necessary to eliminate the interfacial oxide for a good contact system.