Browsing by Author "HUANG, SL"

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HPLC ANALYSIS OF POLYCARBONATE OLIGOMERS AND ITS PROCESS APPLICATIONS IN THE INTERFACIAL PHOSGENATION REACTION
(1990-08-05)
GU, JT
;
HUANG, SL
;
CHANG, FC
;
應用化學系
;
Department of Applied Chemistry
METALLIZATION OF W/CO-TI/SI AND SIMULTANEOUS FORMATION OF DIFFUSION BARRIER AND SHALLOW COSI2 CONTACT IN NORMAL FLOWING-NITROGEN FURNACE
(1993-09-01)
YANG, FM
;
PENG, JG
;
HUANG, TS
;
HUANG, SL
;
CHEN, MC
A structure of W-Ti/CoSi2/Si can be formed from an appropriate metallization system of W(400 angstrom)/Co63Ti37(360 angstrom)/Si at temperatures from 620 to 760-degrees-C in a normal flowing-nitrogen ambient. The W-Ti alloy layer is only slightly oxidized on the shallow surface and can be used as a diffusion barrier between the aluminum and silicide. Furthermore, silicide lateral growth does not occur in this silicidation scheme. However, an additional intermediate Ti-silicide and/or Ti-oxide as well as a Ti-oxide layer on the surface will be formed if the content of Ti in the Co-Ti alloy exceeds that required to saturate in the overlying W film, e.g., W (400 angstrom)/Co63Ti37(840 angstrom)/Si. The Al/W-Ti/COSi2/p+ n diodes with metallization using this scheme are able to maintain the integrity of I-V characteristics with a post-Al annealing at 550-degrees-C for 20 min. In addition, epitaxy of CoSi2 occurs in this metallization system.