Browsing by Author "HUANG, TC"

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EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
(1995-09-18)
LEE, WI
;
HUANG, TC
;
GUO, JD
;
FENG, MS
;
材料科學與工程學系
Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
(1995-09-18)
LEE, WI
;
HUANG, TC
;
GUO, JD
;
FENG, MS
;
材料科學與工程學系
Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.39, and 1.63 +/- 0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. (C) 1995 American Institute of Physics.
RELIABILITY STUDIES OF GAIN-GUIDED 0.85 MU-M GAAS/ALGAAS QUANTUM-WELL SURFACE-EMITTING LASERS
(1994-01-01)
WU, CC
;
TAI, K
;
HUANG, TC
;
HUANG, KF
;
電子物理學系
A reliability study of gain-guided 0.85 mum GaAs/AlGaAs quantum well surface emitting lasers is reported for the first time. 32 lasers were randomly selected to operate at 25 or 50 C with bias currents up to 15 mA, about 4 times the threshold values. The power outputs of the 32 lasers showed no noticeable degradation after 2000-3000 hours of operation.
SWITCHED-CAPACITOR PIPELINED LOGARITHMIC A/D AND D/A CONVERTERS
(1991-12-01)
CHENG, MH
;
HUANG, TC
;
交大名義發表
;
電控工程研究所
;
National Chiao Tung University
The paper presents two switched-capacitor circuits with modest complexity to implement a pipelined logarithmic digital-analogue convertor (LDAC) and logarithmic analogue-digital convertor (LADC), respectively, which spend only one clock time per conversion. In addition, the effect of the capacitor-ratio mismatch on the conversion errors of the convertor circuits is discussed. Hence, from the available maximum capacitor-ratio value and mismatch of the present integrated circuit (IC) technology, the feasible bit length of the pipelined LDAC and LADC can be computed.
TRANSVERSE-MODE EMISSION CHARACTERISTICS OF GAIN-GUIDED SURFACE-EMITTING LASERS
(1993-11-08)
TAI, K
;
LAI, Y
;
HUANG, KF
;
HUANG, TC
;
LEE, TD
Transverse mode emission characteristics of gain-guided surface emitting lasers at 0.85 mum were investigated. Up to six nondegenerate circularly symmetrical modes were observed with detunings between the adjacent modes around 2.5 angstrom. Numerical simulations were performed. The calculated beam sizes, difference of modal gains to account for the side mode suppression ratio when operated with one dominant mode, and wavelength detunings agreed with experiments. Numerical simulations also predict that the mirror loss due to Gaussian beam diffraction is nonnegligible for the 1.3-1.55 mum devices.