Browsing by Author "HUANG, TH"

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A FEASIBILITY STUDY ON THE USE OF AMORPHOUS-SILICON AS OPTICAL-RECORDING MEDIUM
(1987-02-01)
LEE, MC
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TSENG, CJ
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HUANG, CR
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HUANG, TH
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交大名義發表
A NOVEL SPECTROMETER FOR SIMULTANEOUS CHEMICAL-ANALYSES
(1987-09-01)
HUANG, TH
;
交大名義發表
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光電工程學系
;
National Chiao Tung University
;
Department of Photonics
ADHESION AND TRIBOLOGICAL PROPERTIES OF DIAMOND FILMS ON VARIOUS SUBSTRATES
(1990-11-01)
KUO, CT
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YEN, TY
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HUANG, TH
;
HSU, SE
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機械工程學系
BASE CURRENT REVERSAL PHENOMENON IN A CMOS COMPATIBLE HIGH-GAIN N-P-N GATED LATERAL BIPOLAR-TRANSISTOR
(1995-02-01)
HUANG, TH
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CHEN, MJ
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電控工程研究所
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Institute of Electrical and Control Engineering
Base current reversal phenomenon is newly observed in a CMOS compatible high gain n-p-n gated lateral bipolar transistor. We attribute this phenomenon to avalanche generation as verified experimentally and by two-dimensional device simulation. Detailed investigation reveals that: i) the multiplication ratio increases exponentially with the collector voltage or equivalently the peak field at the surface collector corner; and ii) the multiplication ratio is independent of not only the low level base-emitter forward biases applied but also the base width of the transistors fabricated by the same process. Design guideline for suppression of the base current reversal has been established such as to fully realize the potential of the gated lateral bipolar transistors, i.e., a very high current gain of 11,600 can be maintained as long as the power supply voltage is less than the critical value of 1.78 V. On the other hand, new application directly employing this phenomenon has been suggested. Comparisons between the base current reversal phenomenon in the gated lateral bipolar transistor and that in the vertical bipolar transistor have also been performed and significant differences between the two have been drawn and have been adequately explained.
DIAMOND FILM GROWTH ON CEMENTED TUNGSTEN CARBIDES STUDIED BY SEM, AES AND XPS
(1992-11-23)
CHEN, JL
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HUANG, TH
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PAN, FM
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KUO, CT
;
CHANG, CS
Diamond films were deposited on cemented WC substrates using a hot filament chemical vapor deposition (CVD) system with a mixture of CH4 and H-2 as the source gases. The effect of the surface pretreatments of scratching the surface and etching to remove the surface Co from the substrate on diamond nucleation and growth was studied. The effect of CH4 Concentration on diamond growth was also examined. Scanning electron microscopy, Auger electron, X-ray photoelectron and energy dispersive spectroscopies were used to examine the film morphology, quality and compositions. The results show that a good diamond-crystal quality can be obtained by reducing the surface Co content in the substrate to below 1%. Co in the surface layer of the substrate inhibits both diamond nucleation and growth. Polishing and etching treatments to scratch the surface and to remove the surface Co of the substrates are essential to maintain the surface roughness in an appropriate range to obtain diamond films with a good quality and adhesion. A change in CH4 Concentration in the source gases from 0.5 to 0.15% can change the preferred orientation of the diamond films fro m the {100} to the {111} plane.
ELECTROABSORPTION SPECTRA OF THE VANADYL PHTHALOCYANINE FILMS
(1987-03-01)
HUANG, TH
;
交大名義發表
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光電工程學系
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National Chiao Tung University
;
Department of Photonics
ELECTRONIC-SPECTRA AND ZEEMAN EFFECT OF RUTHENIUM PHTHALOCYANINE IN SHPOLSKII MATRICES
(1989-10-10)
CHEN, WH
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HUANG, TH
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RIECKHOFF, KE
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VOIGT, EM
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光電工程學系
EMPIRICAL MODELING FOR GATE-CONTROLLED COLLECTOR CURRENT OF LATERAL BIPOLAR-TRANSISTORS IN AN N-MOSFET STRUCTURE
(1995-01-01)
HUANG, TH
;
CHEN, MJ
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The I-V characteristics of a gated lateral bipolar transistor in an n-MOSFET structure have been measured. The measured collector current has exhibited two distinct components: (i) the gate-con trolled collector current due to the modulation of the surface space-charge region; and (ii) the pure lateral bipolar transistor collector current which is independent of the gate bias applied. These two components have been separated experimentally and have been reproduced by analytic model expressions. The work is useful not only for understanding the hybrid-mode operation but also for designing appropriately the gated lateral bipolar transistors.
GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
(1992-12-01)
CHEN, MJ
;
CHAO, KC
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HUANG, TH
;
TSAUR, JM
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電控工程研究所
The buried-type p-channel LDD MOSFET's biased at high positive gate voltage exhibit new characteristics: 1) the ratio of the drain to gate currents is about 1 X 10(-3) to 5 X 10(-3); and 2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n+ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n+ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, not only the oxide field but also the gate and drain currents are independent of drain voltage.
RELIABILITY-ANALYSIS OF DISTRIBUTED SYSTEMS BASED ON A FAST RELIABILITY ALGORITHM
(1992-03-01)
CHEN, DJ
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HUANG, TH
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交大名義發表
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資訊工程學系
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National Chiao Tung University
The reliability of distributed processing system (DPS) can be expressed by the analysis of distributed program reliability (DPR) and distributed system reliability (DSR). One of the good approaches to formulate these reliability performance indexes is to generate all disjoint File Spanning Trees (FST's) in the DPS graph such that the DPR and DSR can be expressed by the probability that at least one of these FST's is working. In this paper, we present a unified algorithm to efficiently generate disjoint FST's by cutting different links and compute the DPR and DSR based on a simple and consistent union operation on the probability space of the FST's. The DPS reliability related problems are also discussed in this paper. These include 1) the reliability of more than one copy of programs running on a given DPS starting from different sites, 2) the reliability of a specified program running on a given DPS starting from different sites, 3) the reliability of more than one different programs running on a given DPS, and so on. For speeding up the reliability evaluation, nodes merged, series, and parallel reduction concepts are incorporated in the algorithm. Based on the comparison of number of subgraphs (or FST's) generated by the proposed algorithm and by existing evaluation algorithms, we conclude that the proposed algorithm is much more economic in terms of time and space than the existing algorithms.
THE ROLE OF CEMENTED WC SUBSTRATE MORPHOLOGY ON THE DIAMOND FILM GROWTH AND CRACKING RESISTANCE
(1992-05-01)
HUANG, TH
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KUO, CT
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LIN, TS
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機械工程學系
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Department of Mechanical Engineering
TRIBOLOGICAL BEHAVIOR OF CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS ON VARIOUS CUTTING TOOLS
(1993-01-09)
HUANG, TH
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KUO, CT
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LIN, TS
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機械工程學系
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Department of Mechanical Engineering
Diamond films were deposited using a hot-filament-assisted chemical vapour deposition system on various cutting tool materials (i.e. cemented WC, sintered SiC, Si-Al-O-N, etc.). The friction coefficients of the films, the adhesion strengths of the films on the substrates, and the surface roughnesses of the substrates and the films were measured and their correlations analysed. The results indicate that the cutting performance of the diamond-coated inserts is strongly related to the adhesion strength and the friction coefficient of the film. Furthermore, the adhesion strength is also dependent upon the surface Co content and the surface roughness of the pretreated substrate, and the friction coefficient of the film is a function of the surface roughness and the quality and size of the diamond microcrystals. There exists an appropriate range of the substrate roughness values for an optimum adhesion strength. For the cemented WC substrates, the pretreatments of the substrate to remove the surface Co and to microscratch the surface to obtain an optimum surface roughness are essential to the growth of films with a lower friction coefficient and a better cutting performance. The cutting performance of the films on the cemented WC substrates is better than that of those on the sintered SiC or the Si-Al-O-N substrates. This is because there is a lower friction coefficient and a much higher adhesion strength of the film on the cemented WC substrates.
TRIBOLOGICAL BEHAVIORS OF THE DIAMOND-COATED CEMENTED CARBIDE TOOLS WITH VARIOUS COBALT CONTENTS
(1992-04-15)
HUANG, TH
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KUO, CT
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CHANG, CS
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KAO, CT
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WEN, HY
WEAR BEHAVIOR OF VARIOUS DIAMOND-COATED CUTTING TOOLS UNDER DIFFERENT DEPOSITION CONDITIONS
(1993-04-13)
HUANG, TH
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KUO, CT
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LIN, TS
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CHANG, CS
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材料科學與工程學系
A hot-filament-assisted chemical vapour deposition system was used to deposit diamond films on cemented carbide cutting tools with Co contents ranging from 6% to 22%. The surface roughness and friction coefficient of the films were measured under different deposition conditions. A block-on-ring tribotester and scanning electron microscopy were adopted to characterize the tribological behaviour and the film morphology. The results indicate that the cutting performance of the diamond-coated tools is closely related to the friction coefficient and surface roughness of the film and that the friction coefficient is a function of the surface roughness and film quality. For the 6% Co substrate the film deposited under 0.5% CH4 Concentration shows the best film quality and the lowest friction coefficient and its surface roughness is within the optimum range 0.06-0.25 mum; therefore it shows better cracking resistance and wear resistance.