Browsing by Author "HUANG, WC"

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A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
(1995-07-01)
HUANG, WC
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
HIGH-BARRIER PT/AL/N-INP DIODE
(1995-05-25)
HUANG, WC
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface.
PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
(1994-04-01)
HUANG, WC
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n=GaAs contact system. A value of 1.45 x 10(-6) OMEGA-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425-degrees-C for 90 s. It can withstand a thermal aging at 350-degrees-C for 40 h with its pc increasing to 2.94 x 10(-6) OMEGA-CM2 and for an aging at 410-degrees-C for 40 h with its p. increasing to 1.38 x 10(-5) OMEGA-cm2.
PTGE OHMIC CONTACT TO N-TYPE INP
(1995-11-15)
HUANG, WC
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new ohmic contact system, Ge/Pt/Ge/Pt/n-InP, was studied systematically by measuring its specific contact resistance and by using Auger electron spectroscopy, x-ray-diffraction analysis, Rutherford backscattering spectroscopy, and scanning electron microscopy. It was found that the system has a wide temperature range for annealing, i.e., 450-550 degrees C, to achieve the specific contact resistance of the order of 1.0x10(-5) Omega cm(2). It can achieve a low specific contact resistance of 7.71x10(-6) Omega cm(2) when it is subjected to rapid thermal annealing at 500 degrees C for 30 s. The whole process is a solid phase reaction so that a smooth surface morphology is obtained. The ohmicity is due to the heavy doping of Ge in the regrown InP film. The contact system exhibits good thermal stability, being able to maintain a low specific contact resistance of 9.15X10(-6) Omega cm(2) for 20 h, 400 degrees C aging, and 2.77x10(-5) Omega cm(2) for 80 h aging. (C) 1995 American Institute of Physics.