Browsing by Author "Ha, Minh Thien Huu"

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Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer
(2020-06-01)
Kao, Min-Lu
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Ha, Minh Thien Huu
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Lin, Yuan
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Weng, You-Chen
;
Hsu, Heng-Tung
InAlGaN/AlN/GaN high electron mobility transistors (HEMTs) on a silicon substrate with high electron mobility is demonstrated for the first time. The InAlGaN/AlN/GaN heterostructures has a high electron mobility of 1540 cm(2) V-1 s(-1) and low sheet resistance of 228.2 omega sq(-1) by inserting a thin GaN interlayer (IL) between InAlGaN and AlN layers. The experimental results demonstrate that an optimized GaN IL contributes to a better atomic arrangement of the InAlGaN barrier layer in the InAlGaN/GaN HEMTs and results in better electron transport properties for the device. The InAlGaN/GaN device with 170 nm gate and 2 mu m source-to-drain distance shows a high maximum current density (I-max) of 1490 mA mm(-1) and high transconductance (g(m)) of 401 mS mm(-1). Such results demonstrate the potential of adopting InAlGaN/GaN heterostructure on silicon for low cost mm-wave applications in the future.
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
(2017-07-01)
Huynh, Sa Hoang
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Ha, Minh Thien Huu
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Do, Huy Binh
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Nguyen, Tuan Anh
;
Yu, Hung Wei
The growth of high-quality In0.28Ga0.72Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In0.28Ga0.72Sb epilayer has a fully relaxed surface roughness of similar to 1.0nm and a low threading dislocation density of similar to 6.2 x 10(6)cm(-2). The valence band offset (VBO) of 3.11 eV and conduction band offset (CBO) of 3.21 eV for an Al2O3/In0.28Ga0.72Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In0.28Ga0.72Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65 eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices. (C) 2017 The Japan Society of Applied Physics
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
(2016-12)
Do, Huy Binh
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Luc, Quang Ho
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Ha, Minh Thien Huu
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Huynh, Sa Hoang
;
Hu, Chenming Calvin
To achieve low power consumption for CMOS devices, the gate metals must have effective work function (EWF) aligned with the band edges of the channel material and have a small WF variation (WFV). The multilayer TiNi alloys have been successfully applied as the gate metals for HfO2/In0.53Ga0.47As MOS devices in this paper. The EWF of TiNi alloys was found to increase from 4.41 eV for as-deposited sample to 4.62 eV after the alloy was annealed due to the diffusion of Ni atoms into Ti layer. The multilayer TiNi alloy remained amorphous phase with small WFV until annealed at 600 degrees C. The TiNi alloy is thermally more stable as compared with either Ti or Ni metal, because the TiOxNi interfacial layer prevents the diffusion of Ni atoms into HfO2 film and the further reaction of Ti with HfO2. The results can be applied for InGaAs nMOS fabrication.
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
(2015-12-01)
Luc, Quang Ho
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Do, Huy Binh
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Ha, Minh Thien Huu
;
Hu, Chenming Calvin
;
Lin, Yueh Chin
The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-k/III-V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In0.53Ga0.47As structure with the valence band offsets of 2.81 +/- 0.1 eV and the conduction band offsets of 1.9 +/- 0.1 eV was obtained. Better interface and optimized high-k dielectric qualities are achieved using post remote-plasma treatment with either N-2/H-2 or NH3 gases. Sub-nanometer equivalent oxide thickness HfO2/AlN/In0.53Ga0.47As MOSCAPs with low interface trap density and low leakage current density have been characterized.
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
(2017-08-01)
Do, Huy Binh
;
Luc, Quang Ho
;
Ha, Minh Thien Huu
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Huynh, Sa Hoang
;
Nguyen, Tuan Anh
The degeneration of the metal/HfO2\ interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo,Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET. (C) 2017 Author(s).
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
(2019-01-01)
Ha, Minh Thien Huu
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Huynh, Sa Hoang
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Do, Huy Binh
;
Lee, Ching Ting
;
Luc, Quang Ho
A method for the growth of high quality GaSb epilayer on GaAs (001) substrate is demonstrated in this study. It is found that a superior GaSb/GaAs interface can be obtained by depositing a thin Sb-precursor layer on the GaAs substrate containing a GaAs buffer layer. It is suggested that the growth occurs via the interface misfit (IMF) growth mode. Without this treatment, GaSb epilayer may grow according to the Stranski-Krastanov mechanism or via a blend of the Stranski-Krastanov and IMF mechanisms, leading to an inferior GaSb/GaAs interface. This could be due to the intermixing of anions, leading to the turbulent composition and misfit dislocation distribution at the heterointerface. It appears that with the addition of a Sb layer, IMF arrays can be formed at GaSb/GaAs interface resulting in superior GaSb layer without the need for changing the growth parameters.