Browsing by Author "Hai Dang Trinh"

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Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
(2013-06-01)
Hai Dang Trinh
;
Minh Thuy Nguyen
;
Lin, Yueh Chin
;
Quoc Van Duong
;
Hong Quan Nguyen
From the Fowler-Nordheim (FN) current-voltage (I-V) characteristic and X-ray photoelectron spectroscopy (XPS) analysis, the conduction band offset of 2.73 +/- 0.1 eV and the valence band offset of 3.76 +/- 0.1 eV have been extracted for the atomic-layer-deposition (ALD) Al2O3/InSb structure. By these analyses, the parameters of an Al2O3 film including bandgap, electron affinity, and electron effective mass are also deduced. The capacitance-voltage and I-V characteristics of ALD Al2O3/InSb at different deposition temperatures indicate the modification of the Fermi level in InSb to 0.09 eV lower than that in metal side of the sample deposited at 250 degrees C as compared to the samples deposited at lower temperatures. (C) 2013 The Japan Society of Applied Physics
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
(2012-09-01)
Tang, Shih Hsuan
;
Kuo, Chien I.
;
Hai Dang Trinh
;
Hudait, Mantu
;
Chang, Edward Yi
Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al2O3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical characteristics of 10 nm Al2O3/Ge MOSCAP showed p-type behavior with excellent C-V responses and low leakage current. Interface state density in the order of 10(11) eV(-1) cm(-2) was determined from the conductance method and the HF plus RTO treatment exhibits better Al2O3/Ge interface quality than that of pure HF treatment. (C) 2012 Elsevier B.V. All rights reserved.
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
(2013-05-01)
Hai Dang Trinh
;
Lin, Yueh Chin
;
Chang, Edward Yi
;
Lee, Ching-Ting
;
Wang, Shin-Yuan
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature > 300 degrees C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
(2014-08-01)
Quang Ho Luc
;
Chang, Edward Yi
;
Hai Dang Trinh
;
Lin, Yueh Chin
;
Hong Quan Nguyen
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al2O3/In0.53Ga0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (D-it) are demonstrated on the Al2O3/n, p-In0.53Ga0.47As MOS capacitors. The excellent C-V behaviors are observed on both type of In0.53Ga0.47As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In0.53Ga0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.
The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.
(2012-01-01)
Hong Quan Nguyen
;
Hai Dang Trinh
;
Yu, Hung Wei
;
Hsu, Ching Hsiang
;
Chung, Chen Chen
Growth conditions have investigated for growing high quality In0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2x10(6) cm(-2) was achieved at growth temperature of 490 degrees C. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.
The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications
(2012)
Chang, Edward Yi
;
Chang, Chia Hua
;
Tang, Shih Hsuan
;
Hai Dang Trinh
;
Kuo, Chien I.
In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). Both Ge film grown on GaAs and InAs film grown on Si substrate demonstrate high crystallinity and good surface morphology as observed by XRD and AFM. Furthermore, the fabrication process and electric characteristics of Ge/GaAs and InAs/Si is discussed in the study. The developed epitaxial materials systems and device fabrication including InAs on Si, Ge on GaAs are useful for future III-V and Ge integration on Si substrate for next generation high speed low power CMOS as well as for RF/digital mixed signal circuit applications in the future.