Browsing by Author "Hai-Dang Trinh"

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Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
(2012)
Binh-Tinh Tran
;
Chang, Edward Yi
;
Lin, Kung-Liang
;
Luong, Tien-Tung
;
Yu, Hung-Wei
We present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high-quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 degrees C.
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
(2013-09-30)
Hai-Dang Trinh
;
Lin, Yueh-Chin
;
Minh-Thuy Nguyen
;
Hong-Quan Nguyen
;
Quoc-Van Duong
In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metaloxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 +/- 0.1 eV and valence band offset of 3.35 +/- 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10(-4) A/cm(-2). The D-it value of smaller than 10(12) eV(-1) cm(-2) has been obtained using conduction method. (C) 2013 AIP Publishing LLC.
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
(2011-11-01)
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
High-quality In(0.4)Ga(0.6)N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In(0.4)Ga(0.6)N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In(0.4)Ga(0.6)N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
(2011-11-01)
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
(2012-01-01)
Hai-Dang Trinh
;
Lin, Yue-Chin
;
Chang, Edward Yi
;
Hong-Quan Nguyen
;
Wang, Shin-Yuan
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300 degrees C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300 degrees C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.
Studying of InSb MOS Capacitors for Post CMOS Application
(2013)
Chang, Edward Yi
;
Hai-Dang Trinh
;
Lin, Yueh-Chin
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
(2012-05-01)
Hong-Quan Nguyen
;
Chang, Edward Yi
;
Yu, Hung-Wei
;
Hai-Dang Trinh
;
Dee, Chang-Fu
High quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physics