Browsing by Author "Hao, CP"

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Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
(1996-09-16)
Chao, TS
;
Liaw, MC
;
Chu, CH
;
Chang, CY
;
Chien, CH
The mechanism of the nitrogen co-implant to suppress the boron penetration in p(+)-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF, combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties. (C) 1996 American Institute of Physics.
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
(1996-09-16)
Chao, TS
;
Liaw, MC
;
Chu, CH
;
Chang, CY
;
Chien, CH
The mechanism of the nitrogen co-implant to suppress the boron penetration in p(+)-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF, combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties. (C) 1996 American Institute of Physics.
Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
(1997-03-01)
Chao, TS
;
Chien, CH
;
Hao, CP
;
Liaw, MC
;
Chu, CH
The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p(+)-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.