Browsing by Author "He, Kuang-Chi"

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A Low-Power Self-Forward-Body-Bias CMOS LNA for 3-6.5-GHz UWB Receivers
(2010-02-01)
Li, Chen-Ming
;
Li, Ming-Tsung
;
He, Kuang-Chi
;
Tarng, Jenn-Hwan
;
電信工程研究所
A low-power low-noise amplifier (LNA) implemented in 0.18 mu m CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The complementary architecture and direct coupling technique between the first two stages also save bias circuits. The measurement result shows that the proposed LNA presents a maximum power gain of 16 dB with a good input impedance matching (S11 < -12 dB) and an average noise figure of 2.65 dB in the frequency range of 3-6.5 GHz.
Parallel-RC Feedback Low-Noise Amplifier for UWB Applications
(2010-08-01)
He, Kuang-Chi
;
Li, Ming-Tsung
;
Li, Chen-Ming
;
Tarng, Jenn-Hwan
;
電信工程研究所
A two-stage 3.1- to 10.6-GHz ultrawideband CMOS low-noise amplifier (LNA) is presented. In our design, a parallel resistance-capacitance shunt feedback with a source inductance is proposed to obtain broadband input matching and to reduce the noise level effectively; furthermore, a parallel inductance-capacitance network at drain is drawn to further suppress the noise, and a very low noise level is achieved. The proposed LNA is implemented by the Taiwan Semiconductor Manufacturing Company 0.18-mu m CMOS technology. Measured results show that the noise figure is 2.5-4.7 dB from 3.1 to 10.6 GHz, which may be the best result among previous reports in the 0.18-mu m CMOS 3.1- to 10.6-GHz ultrawideband LNA. The power gain is 10.9-13.9 dB from 3.1 to 10.6 GHz. The input return loss is below -9.4 dB from 3.1 to 15 GHz. It consumes 14.4 mW from a 1.4-V supply voltage and occupies an area of only 0.46 mm(2).