Browsing by Author "Henderson, Tim"

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2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area
(2014-01-01)
Lin, Bo-Rong
;
Tao, Nick G. M.
;
Lee, Chien-Ping
;
Henderson, Tim
;
Lin, Barry J. F.
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation
(2015-06-01)
Tao, Nick G. M.
;
Lin, Bo-Rong
;
Lee, Chien-Ping
;
Henderson, Tim
;
Lin, Barry J. F.
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant I-b and V-b modes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.