Browsing by Author "Her, Jim-Long"

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Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
(2012-08-20)
Mondal, Somnath
;
Chen, Hung-Yu
;
Her, Jim-Long
;
Ko, Fu-Hsiang
;
Pan, Tung-Ming
We investigate the resistive memory switching behaviors of Yb2O3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb2O3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb2O3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747695]
The Effect of Al and Ni Top Electrodes in Resistive Switching Behaviors of Yb2O3-Based Memory Cells
(2012)
Mondal, Somnath
;
Her, Jim-Long
;
Ko, Fu-Hsiang
;
Pan, Tung-Ming
;
生物科技學系
In this letter, the effect of Al and Ni top electrodes in resistive switching behavior of Al/Yb2O3/TaN and Ni/Yb2O3/TaN memory devices is proposed. The Al/Yb2O3/TaN memory device demonstrates no such switching performance as applying bias on both top and bottom electrodes, whereas the Ni/Yb2O3/TaN reveals the bipolar memory switching behavior with a high resistance ratio of 10(4) for over 200 cycles of switching responses and good data retention with memory window of about 10(5) at 85 degrees C, as extrapolated up to 10 years. The resistance switching dynamic is ascribed to the conductivity modulation by oxygen ions/vacancies controlled electrochemical reaction process in the Yb2O3 switching layer. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.005202ssl] All rights reserved.