Browsing by Author "Ho, ChiaHua"

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A highly reliable self-aligned graded oxide WOx resistance memory: Conduction mechanisms and reliability
(2007-01-01)
Ho, ChiaHua
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Lai, E. K.
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Lee, M. D.
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Pan, C. L.
;
Yao, Y. D.
WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F(2) cell size. In this work we introduce a graded oxide device that is highly reliable (250 degrees C baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO(2)-SiO(2) Hybrid Resistive-Switching Material
(2011-03-01)
Lee, Ming-Daou
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Ho, ChiaHua
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Yao, Yeong-Der
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材料科學與工程學系
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Department of Materials Science and Engineering
We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO(2)-SiO(2), in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO(2) based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO(2) layer between the bottom electrode and TiO(2) film to enhance the Schottky barrier height, while maintaining TiO(2) based RRAM characteristics.
CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO2-SiO2 Hybrid Resistive-Switching Material
(2011-03-01)
Lee, Ming-Daou
;
Ho, ChiaHua
;
Yao, Yeong-Der
;
材料科學與工程學系
;
Department of Materials Science and Engineering
We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO2-SiO2, in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO2 based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO2 layer between the bottom electrode and TiO2 film to enhance the Schottky barrier height, while maintaining TiO2 based RRAM characteristics.
Efficiency Enhancement and Sensitive Broadband 1Hz similar to 1kHz of Power Generator by Recycling Vibration Energy on Automobile
(2012)
Wei, Mao-Qugn
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Ko, Fu-Hsiang
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Sun, Tai-Ping
;
Chen, Hsuen-Li
;
Lin, Yung-Bin
Based on novel design of moveable magnet between two mutually inimical magnetic forces without strict fabrication, for the first time, we demonstrate successfully a producible power generator with significant efficiency enhancement at broadband frequency range of 1 Hz similar to 1 kHz, 3D-colis stack-ability for output voltage improvement, and recycling vibration energy on automobile simultaneously. Even though the vibration frequency is as low as 1 Hz, two orders-of-magnitude improvements in normalized power (the ratio of power to product of external force and coil turns) provided from previous reports can be obtained. Further, comparing our device with maturely accelerometer chip (MMA7361) indicates that proposed strategies benefit harvesting vibration energy on driving automobile indeed. This vibrated power generator in-turn provides high potential for applications, such as human motion (1 Hz similar to 2 Hz), sporting (5 Hz similar to 10 Hz), and automotive (10 Hz similar to 1 kHz) etc..
Estimating the Detection Stability of a Si Nanowire Sensor Using an Additional Charging Electrode
(2013)
Chen, Min-Cheng
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Chen, Hsiao-Chien
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Lee, Ta-Hsien
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Lin, Yu-Hsien
;
Shih, Jyun-Hung
This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (V-th shift > 60 mV/10(-16)C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.
Silicide Barrier Engineering Induced Random Telegraph Noise in 1Xnm CMOS Contacts
(2011)
Chen, Min-Cheng
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Lin, Chia-Yi
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Chen, Bo-Yuan
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Lin, Chang-Hsien
;
Huang, Guo-Wei
For the first time, new random telegraph noise behaviors are reported for silicide band gap engineering in advanced nano CMOS technology. Noise current pulses of up to 40% magnitude are observed when Schottky barrier is reduced to 0.2eV. The large contact resistance instability is attributed to barrier modification at Schottky contact interface by positive charge trapping. The prevalence and magnitude of the noise are dependent on the contact size, trap density, trap energy and the silicide Schottky barrier height. In this work, we report a fast monitor methodology to identify the silicide process induced traps in small silicide contacts for 1Xnm CMOS technology.
Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memory
(2012-01-01)
Ho, ChiaHua
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Huang, Hsin-Hau
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Lee, Ming-Taou
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Hsu, Cho-Lun
;
Lai, Tung-Yen
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >10(8) A/cm(2) and the highest selectivity of >10(5). Stress test at high current density indicates >10(8) cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F(2) cross-point RRAM applications.