Browsing by Author "Ho, Chung-Hsiang"

Now showing 1 - 2 of 2

GaN HEMTs Power Module Package Design and Performance Evaluation
(2013-01-01)
Ho, Chung-Hsiang
;
Chou, Po-Chien
;
Cheng, Stone
;
機械工程學系
;
Department of Mechanical Engineering
This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Twelve GaN HEMTs chips are mounted on AlN substrate. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured with different connection and sizes of devices, at various power densities, pulse lengths, and duty factors. The packaged GaN HEMTs exhibit the pulsed drain current, 0.43 A/mm. The performance of packaged multichip GaN HEMTs power module is studied. The GaN HEMTs power module exhibit a drain current of 23.04 A, which indicates that connecting GaN HEMTs devices in parallel can effectively increase the drain current.
GaN HEMTs Power Module Package Design and Performance Evaluation
(2013-01-01)
Ho, Chung-Hsiang
;
Chou, Po-Chien
;
Cheng, Stone
;
機械工程學系
;
Department of Mechanical Engineering
This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. We found some conditions that makes the parallel connection difference down to zero. According that, The GaN has maxima drain current=5.98A(98.8%).