Browsing by Author "Ho, PT"

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Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics
(2006-03-01)
Lee, YJ
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Ho, PT
;
Yang, WL
;
Chao, TS
;
Huang, TY
In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric oil Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect clue to the two-dimensional strain effect.
NBTI effects of pMOSFETs with different nitrogen dose imlantation
(2004)
Lee, YJ
;
Tang, LC
;
Wu, MH
;
Chao, TS
;
Ho, PT
NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I-CP were measured simultaneously. Reduction of DeltaV(TH) and I-CP after positive gate bias stressing is related with the recovery of interface states.