Browsing by Author "Ho, Sheng-Zhu"

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Electrical polarization induced by atomically engineered compositional gradient in complex oxide solid solution
(2019-04-12)
Wu, Ping-Chun
;
Huang, Rong
;
Hsieh, Ying-Hui
;
Wang, Bo
;
Yen, Min
Control of inhomogeneity in materials in order to avoid unexpected effects to the system remains a challenge. In this study, we seek to engineer inhomogeneity in materials and anticipate new properties. Through precise control of composition at the atomic scale, an electrical polarization is induced in the composition-graded LaAIO(3)-SrTiO3 solid solution epitaxially deposited on NdGaO3 substrates. By tailoring the direction of compositional gradient, the relationship between structure and electrical polarization is simulated via phase-field modeling and revealed by a combination of scanning transmission electron microscopy and scanning probe microscopy. The analysis of the results indicates that the induced polarization is due to the flexoelectric effect in the compositional gradient system. The results of this study provide a new pathway for obtaining a new material genome. Moreover, by a suitable design of the new genome, that is, by using different combinations of compositional gradient geometries, local conduction can be obtained and manipulated, providing a new approach to obtain the desired properties.
Oxide Heteroepitaxy-Based Flexible Ferroelectric Transistor
(2019-07-24)
Tsai, Meng-Fu
;
Jiang, Jie
;
Shao, Pao-Wen
;
Lai, Yu-Hong
;
Chen, Jhih-Wei
With the rise of Internet of Things, the presence of flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing the advantages of high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, the performance of these devices is restricted since conventional flexible substrates show poor thermal stability to integrate traditional ferroelectric materials, limiting the compatibility of wearable devices. In this study, we adopt flexible muscovite mica as a substrate due to its good thermal properties and epitaxial integration ability. A flexible FeFET composed of oxide heteroepitaxy on muscovite is realized by combining an aluminum-doped zinc oxide film as the semiconductor channel layer and a Pb(Zro7Ti0.3)03 film as the ferroelectric gate dielectric. The excellent characteristics of the transistor together with superior thermal stability and mechanical flexibility are demonstrated through various mechanical bending and temperature measurements. The on/off current ratio of the FeFET is higher than 103, which based on the field effect in the transfer curve. The smallest bending radius that can be achieved is 5 mm with a cyclability of 300 times and a retention of 100 h. This study opens an avenue to use oxide heteroepitaxy to construct a FeFET for next-generation flexible electronic systems.