Browsing by Author "Ho, Ti-En"

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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
(2014-11-03)
You, Yao-Hong
;
Su, Vin-Cent
;
Ho, Ti-En
;
Lin, Bo-Wen
;
Lee, Ming-Lun
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).