Browsing by Author "Ho, Wei-Hsuan"

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Achieving high sensing in 0.5 nA for the driving pixel currents in AMOLEDs with settling time of 7 mu s by a new external current sensing circuit
(1970-01-01)
Pandey, Rajeev Kumar
;
Huang, Tzu Hao
;
Ho, Wei-Hsuan
;
Pribadi, Eka Fitrah
;
Chao, Paul C. -P.
A new external current sensing circuit with baseline compensation for the active matrix organic light emitting diode (AMOLED) display is developed herein to achieve the sensing precision of 0.5 nA in pixel with 7 mu s of settling time. Current sensing circuit incorporates a new push-pull transient current feedforward whereas the current analog to digital converter (CADC) based digital baseline current compensation incorporates an 11-bit current digital-to-analog converter, a current comparator and a digital control circuit with an 11-bit successive approximation register. The proposed integrated mixed signal IC drives a 6T1C pixel-based AMOLED panel with one horizontal time of 7.7 mu s at a scan frequency of 60 Hz. The design readout chip can simultaneously sense and compensate TFT baseline current variation. The readout circuit and the baseline compensation circuit are implemented in the integrated chip with chip area of 125 mu m x 46 mu m and fabricated via TSMC T18 process. With the standard 3.3 V supply, experimental result shows that the overall power consumption of the chip is 988 mu W watt. The minimum LSB current for the CADC is 10 nA and the maximum achievable sampling rate is 500 KS/s. The measured INL and DNL of CADC is 0.84 and 0.98 respectively. Despite of heavy data line parasitic capacitances (2.6 K ohm/20 pF) of the AMOLED display, experimental results show that the proposed circuit can sense 0.5 nA current within 7 mu s of settling time. The sensing precision of 0.5 nA within 7 mu s are the best among all reported literature to date whereas the current sense range (0.5-500 nA), system sampling rate (142 KS/s), INL (0.84) and DNL (0.98) of the CADC is approximately comparable among all reported.
ACHIEVING SENSING PRECISION OF 0.5nA IN PIXEL WITH 7 mu s SETTLING TIME BY A NEW EXTERNAL CURRENT SENSING CIRCUIT FOR AMOLED DISPLAYS
(2019-01-01)
Pandey, Rajeev
;
Huang, Tzu Hao
;
Ho, Wei-Hsuan
;
Chao, Paul C. -P.
;
Pribadi, Eka Fitrah
This study proposes a new push-pull transient current feedforward (PPTCF) based pixel current sensing circuit for active matrix organic light emitting diode (AMOLED) displays with precision within 0.5nA. A finite state machine (FSM) based digital control circuit is designed and developed for the baseline compensation. In order to achieve high accuracy, the digital baseline compensation circuit also incorporates the current digital -to -analog converter (CDAC) and successive approximation current analog-to-digital converter (CADC). The minimum LSB current for the CADC is 10nA. The readout circuit is implemented in the integrated chip with chip area of 1251.1m x 46 m and fabricated via TSMC T18 process. With standard 3.3V supply, the experimental result shows that the overall power consumption of the chip is 990 W watt. Despite of all parasitic capacitances of the panel display, experimental results show that the proposed circuit can sense 0.5nA current within 7 s of settling time. The sensing precision of 0.5nA within 71 mu s are the best among all reported literature to date.