Browsing by Author "Ho, Yu-Hsuan"

Now showing 1 - 3 of 3

Efficiency improvement of organic bifunctional devices by applying omnidirectional antireflection nanopillars
(2014)
Ho, Yu-Hsuan
;
Liang, Hsun
;
Liu, Shun-Wei
;
Tian, Wei-Cheng
;
Chen, Fang-Chung
OLED/OPV tandem devices have attracted great interest due to their various functions in green technology and potential sensing applications. Here we report a novel concept to improve the luminous efficiency and energy conversion efficiency of tandem bifunctional devices by integrating antireflection structures consisting of irregular nanopillars as the capping layer. The nanopillars were made on flexible polycarbonate substrates by using a nanoimprint method with an anodized aluminum oxide template. The average reflectivity of the patterned polycarbonate substrate at visible wavelengths was reduced to 3.3%. With the antireflection structures, the luminous intensity for bifunctional devices was improved by 41.9% compared to a device with a flat capping layer. The power conversion efficiency was improved from 0.48% to 0.61%, a 27.0% enhancement at normal incidence.
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
(2018-07-01)
Wu, Chia-Hsun
;
Han, Ping-Cheng
;
Liu, Shih-Chien
;
Hsieh, Ting-En
;
Lumbantoruan, Franky Juanda
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.
Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
(2019-01-01)
Han, Ping-Cheng
;
Wu, Chia-Hsun
;
Ho, Yu-Hsuan
;
Yan, Zong-Zheng
;
Chang, Edward Yi
In this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with high threshold voltage of 3.19V, high maximum drain current of 716 mA/mm and high breakdown voltage of 906V is demonstrated for the first time. Three different thin barrier structures were compared for device performance. In addition, long-term reliability measurements were carried out to investigate the interface quality of the devices with and without gate recess. The recessfree device exhibits a smaller Vth hysteresis and a more stable performance than those of gate recessed devices. Overall, the recess-free thin barrier AlGaN/GaN MIS-HEMT demonstrates promising performance for power switching applications.