Browsing by Author "Ho, ZH"

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Characterization of hot-hole injection induced SILC and related disturbs in flash memories
(2001-02-01)
Yih, CM
;
Ho, ZH
;
Liang, MS
;
Chung, SS
;
電子工程學系及電子研究所
In this paper, we have proposed a new method for the study of disturb failure mechanisms caused by stress induced leakage current (SILC) in source-side erased flash memories. This method is able to directly separate the individual components of SILC due to either carrier charging/disharging in the oxide or the positive charge/trap assisted electron tunneling into the floating gate, In addition, the present method is very sensitive with capability of measuring ultralow current (<10(-19) A), Results show that, at low oxide field, the disturb is mainly contributed by the so-called charging/disharging of carriers into/from the oxide due to the capacitance coupling effect. While at high oxide field, the positive charge/trap assisted electron tunneling induced floating-gate charge variation is the major cause of disturb failure.
N-channel versus P-channel flash EEPROM - Which one has better reliabilities
(2001)
Chung, SS
;
Liaw, ST
;
Yih, CM
;
Ho, ZH
;
Lin, CJ
In this paper, a comprehensive study of n- and p-channel flash cells in terms of performance and reliability is presented. In particular, the hot-carrier reliability issues such as disturbs, endurance, in both n- and p-channel flash cells are also investigated. The most serious reliability issue in p-channel flash memory, drain disturb, can be overcome by using DINOR structure. These results can be used as a guideline for designers to choose. Although the n-channel flash cell exhibits higher electron mobilities, the p-channel flash cell is most advantageous with features such as high speed, better reliability, and low power. These meet the scaling trend such that it is a promising candidate for future flash memory applications.