Browsing by Author "Hong, Chi-Chang"

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Strong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arrays
(2009-09-28)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In(x)Ga(1-x)N) nanorod arrays. The formation of In(x)Ga(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In(x)Ga(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
(2009-09-28)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
Strong Photolumineseence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photolumineseence
(2009)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescene measurement. (C)2009 Optical Society of America