Browsing by Author "Horng, GJ"

Now showing 1 - 3 of 3

Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector
(2001-02-15)
Horng, GJ
;
Chang, CY
;
Chang, T
;
Ho, C
;
Wu, CS
The microstructure effects on the performance of the PtSi Schottky barrier detector (SBD) have been investigated in detail. The growth temperatures were ranged from 350 to 550 degreesC. The thickness of the PtSi film measured by high resolution transmission electron microscopy (HRTEM) is around 4 nm. The electron diffraction pattern shows an intermingling of both (1 (1) over bar 0) and (I (2) over bar 1) orientations when the PtSi film is formed at 350 degreesC. However, the diffraction patterns show only (1 (2) over bar1) orientation when the PtSi films are formed above 450 degreesC. It was found that the electrical barrier height of the Schottky barrier detector formed at 350 degreesC is about 0.02 eV higher than that formed above 450 degreesC. The microstructure of the PtSi film does not change even though the formation temperature is further increased to 550 degreesC. Nevertheless, the higher the formation temperature, the larger is the grain size. It was also observed that the grain size does not change the electrical barrier height. However, the quantum efficiency of the detector is much higher if the grain size is larger. The results indicate that the quantum efficiency of the detector can be improved if the PtSi film has (1 2 1) orientation and larger grain size. (C) 2001 Elsevier Science B.V. All rights reserved.
Random Line selected Charge Accumulation (RLCA) CCD readout structure for high frame rate infrared image application
(2000)
Horng, GJ
;
Chang, CY
;
Yen, YC
;
Wang, WL
;
電子工程學系及電子研究所
A 512x512 monolithic Platinum Silicide Schottky Barrier detector array with random line selectable operation was proposed. The device modified from an interline CCD configuration by adapt a Random Line selected Charge Accumulation charge-coupled device on the vertical register and four tap readout on the horizontal CCD register to achieve a high frame rate and high fill factor operation. A 9-bit digital decoder is used to select which line of the sensor array that transfer their signals to the vertical CCD register. Accompanied with the vertical reset drain circuitry, either one line or up to 512 lines of the video signals can be selected and transferred to the vertical CCD register. All of the video signals on the unselected lines are then transferred to the vertical CCD channel simultaneously and finally dumped to the vertical reset drain. Since this unique readout structure, a frame rate of up to 240 frames/second can be achieved for 128x128 of the SBD array under 5 MHz of clock frequency. A high-speed sub-frame readout format can be easily fulfilled under this architecture. This architecture not only maintains the advantages of line-addressed charge-accumulation structure but also provides the capability to readout any portion of the array.
The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
(2000-10-03)
Horng, GJ
;
Chang, CY
;
Ho, C
;
Lee, CY
;
Huang, TY
The effects of growth temperature on the microstructure and electrical barrier height of the PtSi Schottky barrier detector (SBD) have been investigated. PtSi films, 4 nm in thickness were deposited at various temperatures ranging from 350 to 550 degreesC. The electron diffraction patterns showed that PtSi film formed at 350 degreesC depicts an intermingling of both (1 (1) over bar1) and (1 (2) over bar1) orientations. However, only (1 (2) over bar1) orientation was shown when the PtSi films were formed above 450 degreesC. Moreover, SBD formed at 350 degreesC was found to depict an electrical barrier that is approximately 0.02 eV higher than those formed above 450 degreesC. Although the microstructure and the electrical barrier height of the PtSi film do not change when the formation temperature was further increased from 450 to 550 degreesC. Nevertheless, the higher formation temperature resulted in a larger grain size, indicating that grain size alone does not affect the barrier height of the resultant SBD. (C) 2000 Elsevier Science S.A. All rights reserved.