Browsing by Author "Horng, R. H."

Now showing 1 - 2 of 2

A Novel InGaN Blue Light-Emitting Diode with a Self-Textured Oxide Mask Structure
(2011-01-01)
Lin, W. Y.
;
Wuu, D. S.
;
Huang, S. C.
;
Lo, S. Y.
;
Liu, C. M.
A 460 nm InGaN/GaN blue light-emitting diode (LED) with a self-textured oxide mask (STOM) structure was fabricated and demonstrated. The design of the STOM on the GaN/sapphire substrate could be used to reduce the threading dislocation density in the epitaxial template and enhance the light extraction efficiency via the light scattering or deflection from the corrugated STOM. Under an injection current of 20 mA, the forward voltage of the STOM-LED and conventional LED (C-LED) was nearly identical at 3.41 V. Moreover, the leakage current of the STOM-LED was lower than the C-LED. Furthermore, the light output power of the STOM-LED was approximately 43% higher (at 20 mA) than the C-LED. This significant improvement was attributed to the enhanced light extraction via the STOM array.
Composite metal substrate for thin film AlGaInP LED applications
(2019-04-15)
Horng, R. H.
;
Sinha, Shreekant
;
Lee, C. P.
;
Feng, H. A.
;
Chung, C. Y.
The fabrication and feasibility assessment of n-side up, thin-epilayer, AlGaInPbased vertical light-emitting-diodes (LEDs; emitting area: 1 mm x 1 mm) with a copperinvar-copper-composite metal (CIC) substrate was obtained by wafer bonding and epilayer transferring technologies. The structure of CIC substrate is a top Cu layer of 20 mu m, a middle Invar layer of 64 mu m, and a bottom Cu layer of 20 mu m. The invar layer consists of Fe and Ni at a ratio of 70% to 30%. The coefficient of thermal expansion for CIC is about 6.1 x 10(-6) /K, which is similar to that of the GaAs substrate (5.7 x 10(-6)/K) and AlGaInP epilayers. Due to the high thermal conductivity (160 W/m-K) of 10(4)-mu m-thick CIC, the high performances of the packaged LEDs are obtained. They present a low red shift phenomenon (from 623 to 642 nm for 100 mA to 1 A) and a high output power 212 mW at 800 mA. The CIC substrate can be extended to fabricate high-efficiency thin film LEDs with conventional vertical electrodes. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement