Browsing by Author "Hou, CY"

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A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film
(2006)
Hou, CY
;
Wu, YCS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous Si (alpha-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, we have used alpha-Si films with a thickness of 100 nm as an Ni-gettering layer, silicon-nitride (SiNx) films with a thickness of 30 nm as the etching stop layers and annealed at 550 degrees C for 90 h to reduce the Ni-metal impurity within the NILC poly-Si film. (c) 2006 The Electrochemical Society.
Comparison of TFTs made by IMPRINT and IMPRINT-ELA methods
(2006)
Hou, CY
;
Wu, YS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Comparison of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by both IMPRINT and IMPRINT-excimer loser annealing (ELA) methods was investigated. IMPRINT poly-Si was fabricated by pressing imprint mold (coated with Ni film) together with amorphous Si film and then annealing at 550 degrees C. After the sample stack was separated, IMPRINT poly-Si film was irradiated by an excimer laser to form IMPRINT-ELA poly-Si. Upon increasing the laser energy to 345 mJ/cm(2), the performance of IMPRINT-ELA-TFT was found to be far superior to that of IMPRINT-TFT due to larger grains and fewer intragrain defects of the IMPRINT-ELA poly-Si film than that of the IMPRINT poly-Si film. The mobility of the IMPRINT-ELA-TFT was 413 cm(2)/Vs, which was 31.7 times higher than that of the IMPRINT-TFT. The on/off current ratio of the IMPRINT-ELA-TFT was 4.24 x 10(6), which was two orders magnitude higher than that of the IMPRINT-TFT. (c) 2006 The Electrochemical Society.
Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
(2005-10-01)
Hou, CY
;
Wu, YCS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi(2), precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi(2) precipitates, and (3) the subsequent migration of NiSi(2) precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress oil the growth of NILC. It was found that tensile stress did not enhance NiSi(2) formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.
Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers
(2005-05-01)
Liu, PC
;
Hou, CY
;
Wu, YCS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 degrees C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature. (c) 2004 Elsevier B.V. All rights reserved.
Wafer bonding using indium tin oxide intermediate layer for high brightness LEDs
(2003)
Liu, PC
;
Hou, CY
;
Wu, YCS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Direct-wafer-bonding technique has been used to fabricate high brightness light emitting diodes (LEDs). However, bonding processes were Usually performed at elevated temperatures, which may degrade the quality of the LED structure. In addition to this, the misorientation between two bonded wafers may cause defects between the wafers. In this Study, these two problems were solved by bonding the wafers with an indium tin oxide (ITO) polycrystalline film at temperature below 650 degreesC. It was found that the electrical resistance and optical loss decreased with the bonding temperature.