Browsing by Author "Hou, Chih-Yuan"

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Development of stable micro-crystalline silicon AMLCD
(2007-01-01)
Chang, Chan-Ching
;
Chen, Chih-Hsien
;
Peng, Ya-Hui
;
Lee, Yeong-Shyang
;
Hou, Chih-Yuan
Bottom-gate microcrystalline silicon thin film transistors (mu c-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.
Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate
(2006-09-01)
Hou, Chih-Yuan
;
Lin, Chi-Ching
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using a-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.
Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains
(2006-07-01)
Hou, Chih-Yuan
;
Wu, YewChung Sermon
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Thin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT.