Browsing by Author "Hou, T. -H."

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Exploiting analogue OxRAM conductance modulation for contrast enhancement application
(2020-06-11)
Kumar, A.
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Bezugam, S. S.
;
Hudec, B.
;
Hou, T. -H.
;
Suri, M.
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations
(2014-06-07)
Zhao, L.
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Chen, H. -Y.
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Wu, S. -C.
;
Jiang, Z.
;
Yu, S.
Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.