Browsing by Author "Hou, YT"

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Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
(2004-09-20)
Low, T
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Li, MF
;
Shen, C
;
Yeo, YC
;
Hou, YT
Electron mobility in strained silicon and various surface oriented germanium ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness are systematically studied. For biaxial tensile strained-Si UTB MOSFETs, strain effects offer mobility enhancement down to a body thickness of 3 nm, below which strong quantum confinement effect renders further valley splitting via application of strain redundant. For Ge channel UTB MOSFETs, electron mobility is found to be highly dependent on surface orientation. Ge<100> and Ge<110> surfaces have low quantization mass that leads to a lower mobility than that of Si in aggressively scaled UTB MOSFETs. (C) 2004 American Institute of Physics.
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
(2006-06-01)
Wu, CH
;
Hung, BF
;
Chin, A
;
Wang, SJ
;
Yen, FY
The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
(2004-01-01)
Lin, CY
;
Chin, A
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Hou, YT
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Li, MF
;
McAlister, SP
We have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.
Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide
(2006-05-01)
Wu, WH
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Tsui, BY
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Huang, YP
;
Hsieh, FC
;
Chen, MC
A new circuit model of -five elements has been proposed for the two-frequency capacitance-voltage (C-V) correction of high-k gate dielectric and ultrathin oxide. This five-element circuit model considered the static and dynamic dielectric losses in a lossy MOS capacitor, the parasitic well/substrate resistance, and the series inductance in the cables and probing system. Each of the circuit elements could be easily extracted from the two-frequency C-V and static current-voltage (I-V) measurements if some criteria are well satisfied. In addition, this model can also be transformed into another two four-element circuit models to simplify the analysis and calculations, depending on the gate ea age current.