Browsing by Author "Hseih, Wei-Ping"
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Item type:Item, Enhancement of Open-Circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides(2013-05-01) ;Lin, Je-Wei ;Wu, Chien-Hung ;Wu, Sheng-Wei ;Hseih, Wei-PingDu, Chen-HsuSurface passivation of solar cells is investigated using CF4 plasma treatment on low-temperature oxides to enhance the open-circuit voltage of the solar cells. Low-temperature oxides grown by a nitric acid solution are treated with the CF4 plasma. Solar cells undergoing this scheme show an improved performance, including low-saturation current density and good quantum efficiency at short wavelengths. Experimental results demonstrate that the CF4 plasma pretreatment on low-temperature oxides can significantly improve the open-circuit voltage, short-circuit current, and fill factor for silicon wafer-based solar cells. This technique is very promising for in-line solar cell manufacturing.Item type:Item, Improved Rear-Side Passivation by Atomic Layer Deposition Al2O3/SiNx Stack Layers for High V-OC Industrial p-Type Silicon Solar Cells(2013-09-01) ;Lin, Je-Wei ;Chen, Yi-Yang ;Gan, Jon-Yiew ;Hseih, Wei-PingDu, Chen-HsuThis research develops high open-circuit voltage (V-OC) p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (<450 degrees C) thermal atomic layer deposition of Al2O3 layers and plasma-enhanced chemical vapor deposition of SiNx passivation layers. An increase in the V-OC and the short-circuit current (J(SC)) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm(2)) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.