Browsing by Author "Hseuh, TH"

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Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
(2005-09-01)
Huang, HW
;
Chu, JT
;
Kao, CC
;
Hseuh, TH
;
Lu, TC
This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
(2004-03-01)
Kuo, HC
;
Chang, YS
;
Lai, FY
;
Hseuh, TH
;
Chu, LT
In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.