Browsing by Author "Hsia, Ru-Shang"

Now showing 1 - 1 of 1

Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
(2007-04-01)
Su, Ke-Hua
;
Hsu, Wei-Chou
;
Lee, Ching-Sung
;
Hu, Po-Jung
;
Hsia, Ru-Shang
A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (partial derivative V-th/partial derivative T) of -0.807 mV/K and a high-temperature linearity (partial derivative GVS/partial derivative T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g(m,max)) of 94 (109) mS/mm at 450 (300) K.