Browsing by Author "Hsiao, Ching"

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High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode
(2013-10-01)
Huang, Yu-Chih
;
Tsai, Wan-Lin
;
Chou, Chia-Hsin
;
Wan, Chung-Yun
;
Hsiao, Ching
The pyramid structure fabricated with the potassium hydroxide (KOH) anisotropically etched (100) silicon substrate has been deposited with a copper film as the bottom electrode of the programmable metallization cell (PMC) memory to significantly improve the resistive switching characteristic. As compared with the conventional flat copper electrode, this pyramid-structured electrode exhibited the set/reset voltage as low as 1/0.6 V and superior endurance of 2400 cycles at the set/reset voltages of -5/+3 V for the voltages pulsewidth of 1 mu s. The high performance of this PMC could be attributed to high local electrical fields at the tips of the pyramid structure, resulting in the formation of the narrower conductive filaments that facilitate the lower operation voltage and better endurance.
Oxygen Plasma Functionalized Multiwalled Carbon Nanotube Thin Film as A pH Sensing Membrane of Extended-Gate Field-Effect Transistor
(2013-10-01)
Tsai, Wan-Lin
;
Huang, Bai-Tao
;
Yang, Po-Yu
;
Wang, Kuang-Yu
;
Hsiao, Ching
High-performance pH sening membranes of extended-gate field-effect transistors (EGFETs) composed only of oxygen-plasma-functionalized carbon nanotube thin films (CNTFs) are demonstrated. A large number of oxygen-containing functional groups are decorated on the sidewalls of carbon nanotubes (CNTs) after the oxygen plasma treatment. These functional groups act as the sensing sites and accurately respond to the ions of interest in different pH levels. Therefore, these functionalized CNTFs as the pH-EGFET sensing membranes can achieve a high voltage sensitivity of 56.8 mV/pH, a large voltage linearity of 0.9995, and a wide sensing range of pH 1-13. In addition, the oxygen-plasma-functionalized CNTFs also exhibit superior reliability with a small hysteresis voltage of 4.98 mV.