Browsing by Author "Hsiao, Jui-Chung"

Now showing 1 - 4 of 4

Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics
(2014-04-01)
Chen, Ting-Gang
;
Yu, Peichen
;
Chen, Shih-Wei
;
Chang, Feng-Yu
;
Huang, Bo-Yu
Nanostructured crystalline silicon is promising for thin-silicon photovoltaic devices because of reduced material usage and wafer quality constraint. This paper presents the optical and photovoltaic characteristics of silicon nanohole (SiNH) arrays fabricated using polystyrene nanosphere lithography and reactive-ion etching (RIE) techniques for large-area processes. A post-RIE damage removal etching is subsequently introduced to mitigate the surface recombination issues and also suppress the surface reflection due to modifications in the nanohole sidewall profile, resulting in a 19% increase in the power conversion efficiency. We show that the damage removal etching treatment can effectively recover the carrier lifetime and dark current-voltage characteristics of SiNH solar cells to resemble the planar counterpart without RIE damages. Furthermore, the reflectance spectra exhibit broadband and omnidirectional anti-reflective properties, where an AM1.5 G spectrum-weighted reflectance achieves 4.7% for SiNH arrays. Finally, a three-dimensional optical modeling has also been established to investigate the dimension and wafer thickness dependence of light absorption. We conclude that the SiNH arrays reveal great potential for efficient light harvesting in thin-silicon photovoltaics with a 95% material reduction compared to a typical cell thickness of 200 mu m. Copyright (c) 2012 John Wiley & Sons, Ltd.
Effect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar Cell
(2011)
Hsiao, Jui-Chung
;
Chen, Chien-Hsun
;
Lin, Chao-Cheng
;
Wu, Der-Ching
;
Yu, Peichen
In this work, effects of a hydrogen dilution ratio on the intrinsic amorphous hydrogenated silicon (i-a-Si:H) film of heterojunction silicon-based (HJS) solar cells were systematically studied. Long lifetime samples were obtained for R <= 5, indicating a good a-Si:H/c-Si interface. The dark conductivity was drastically decreased for R >= 2, indicating a good film quality. Consequently, an optimized power conversion efficiency of the HJS solar cells was obtained at a moderate R between 2 and 5. In contrast to the previous emphasis on long lifetime, the results indicate that both the interface and film qualities are correlated to the hydrogen dilution, which are important to achieve high-efficiency HJS solar cells. We show that the most optimized HJS solar cell exhibits a marked efficiency of 17.27%. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3607981] All rights reserved.
Fabricating 43-mu m-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates
(2015-01-01)
Du, Chen-Hsun
;
Chen, Chien-Hsun
;
Wang, Teng-Yu
;
Hsiao, Jui-Chung
;
Yeh, Chun-Ming
A 43-mu m-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700 degrees C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%. (C) The Author(s) 2015. Published by ECS. All rights reserved.
Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells
(2013-09-01)
Hsiao, Jui-Chung
;
Chen, Chien-Hsun
;
Yang, Hung-Jen
;
Wu, Chien-Liang
;
Fan, Chia-Ming
This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.