Browsing by Author "Hsieh, CC"

Now showing 1 - 17 of 17

A new CMOS readout circuit design for the IR FPA with adaptive gain control and current-mode background suppression
(1996)
Hsieh, CC
;
Wu, CY
;
Jih, FW
;
Sun, TP
;
Chang, H
A new cryogenic CMOS readout structure for infrared focal plane array
(1997-08-01)
Hsieh, CC
;
Wu, CY
;
Sun, TP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new current readout structure for the infrared (IR) focal-plane-array (FPA), called the switch-current integration (SCI) structure, is presented in this paper. By applying the share-buffered direct-injection (SBDI) biasing technique and off focal-plane-array (off-FPA) integration capacitor structure, a high-performance readout interface circuit for the IR FPA is realized with a pixel size of 50 x 50 mu m(2). Moreover, the correlated double sampling (CDS) stage and dynamic discharging output stage are utilized to improve noise and speed performance of the readout structure under low power dissipation. An experimental SCI readout chip has been designed and fabricated in 0.8-mu m double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip at 77 K with 4 and 8 V supply voltages have successfully verified both the readout function and the performance improvement. The fabricated chip has a maximum charge capacity of 1.12 x 10(8) electrons, a maximum transimpedance of 1 x 10(9) Omega, and ae active power dissipation of 30 mW. The proposed CMOS SCI structure can be applied to various cryogenic IR FPA's.
A new cryogenic CMOS readout structure for infrared focal plane array
(1997-08-01)
Hsieh, CC
;
Wu, CY
;
Sun, TP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new current readout structure for the infrared (IR) focal-plane-array (FPA), called the switch-current integration (SCI) structure, is presented in this paper. By applying the share-buffered direct-injection (SBDI) biasing technique and off focal-plane-array (off-FPA) integration capacitor structure, a high-performance readout interface circuit for the IR FPA is realized with a pixel size of 50 x 50 mu m(2). Moreover, the correlated double sampling (CDS) stage and dynamic discharging output stage are utilized to improve noise and speed performance of the readout structure under low power dissipation. An experimental SCI readout chip has been designed and fabricated in 0.8-mu m double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip at 77 K with 4 and 8 V supply voltages have successfully verified both the readout function and the performance improvement. The fabricated chip has a maximum charge capacity of 1.12 x 10(8) electrons, a maximum transimpedance of 1 x 10(9) Omega, and ae active power dissipation of 30 mW. The proposed CMOS SCI structure can be applied to various cryogenic IR FPA's.
Activated kinetics of room-temperature-deposited SrTiO(3) thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating rates
(2005-02-01)
Wang, TC
;
Lee, JY
;
Hsieh, CC
;
Juang, JY
;
Wu, KH
A series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660 degrees C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4 eV.
Activated kinetics of room-temperature-deposited SrTiO3 thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating rates
(2005-02-01)
Wang, TC
;
Lee, JY
;
Hsieh, CC
;
Juang, JY
;
Wu, KH
A series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660 degrees C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4 eV.
CAN-based motion control design
(2003)
Hsieh, CC
;
Wang, AP
;
Hsu, PL
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Applying the controller area network (CAN) bus, this paper proposes the integration of three advanced motion control designs: (1) the zero phase error tracking control (ZPETC) mainly for each individual axis in the multi-axis system, (2) the zero magnitude error tracking control (ZMETC) for each individual axis at the high speed in the multi-axis system and (3) the cross-coupled control (CCC) for multiple axes of the whole system. The ZPETC and CCC or ZMETC and CCC serve to improve tracking and contouring motion accuracy, respectively. Experimental results on two AC servomotors show significantly improved motion accuracy, demonstrate the feasibility of the proposed approach.
Characteristics of YBa2Cu3O7 thin films deposited on substrates buffered by various TiO2 layers
(2001-04-15)
Lin, PL
;
Liu, CW
;
Hsieh, CC
;
Wu, KH
;
Juang, JY
Titanium nitride (TiN) and superconducting YBa2Cu3O7 (YBCO) thin films have been deposited sequentially on SrTiO3(STO)(100) substrates by in situ pulsed laser ablation. The TiN films were originally intended to serve as the lower contact electrode of the c-axis YBCO thin films. It was found that, although high-quality YBCO films could be obtained with the YBCO/TiN/STO(100) bilayer structure, the TiN(100) layer was oxidized which changed the structure into YBCO/TiO2/STO(100) during YBCO deposition. Comparative studies of depositing YBCO films directly onto a dc-sputtered TiO2/STO(100) template conventionally used in the selective epitaxial growth (SEG) process have, however, resulted in formation of a nonsuperconducting YBCO top layer. The characteristics of the resultant TiO2 layers obtained using various processes were analyzed to delineate the apparent discrepancies.
Design, optimization, and performance analysis of new photodiode structures for CMOS active-pixel-sensor (APS) imager applications
(2004-02-01)
Wu, CY
;
Shih, YC
;
Lan, JF
;
Hsieh, CC
;
Huang, CC
The dark current in the active-pixel-sensor (APS) cell of a CMOS imager is known to be mainly generated in the regions of bird's beak after the local oxidation of silicon process as well as the surface damage caused by the implantation of high doping concentration. Furthermore, shallow and deep pn-junctions can improve the photo-sensitivity for light of short and long wavelengths, respectively. In this paper, two new photodiode structures using p-substrate and lightly-doped sensor implant SN- as pn-junction photodiode with the regions of bird's beak embraced by SN- and p-field implants, respectively, are proposed and analyzed to reduce dark current and enhance the overall spectral response. 5 mum x 5 pm APS cells fabricated in a 0.35-mum single-poly-triple-metal (1P3M) 3.3-V CMOS process are designed by using the proposed photodiode structures. As shown from the experimental results, the two proposed photodiode structures of 5 pin x 5 pm APS cells have lower dark currents of 30.6 mV/s and 35.2 mV/s at the reverse-biased voltage of 2 V and higher spectral response, as compared to the conventional structure and other photodiode structures. Thus, the two proposed new photodiode structures can be applied to CMOS imager systems with small pixel size, high resolution, and high quality.
Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films
(2004-10-15)
Chang, WJ
;
Hsieh, CC
;
Juang, JY
;
Wu, KH
;
Uen, TM
Single-phase electron-doped manganite thin films with nominal composition of La0.7Ce0.3MnO3 (LCeMO) have been prepared on SrTiO3 (100) substrates by pulsed laser deposition. The conditions for obtaining purely single-phase LCeMO films lie within a very narrow window of substrate temperature (T(s)similar to720 degreesC) and laser energy density (E(D)similar to2 J/cm(2)) during deposition. In situ postdeposition annealing, mainly to relax the possible epitaxial in-plane tensile strain between the film and the substrate, leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. This is indicative of a strong coupling between the electron and lattice degree of freedom. (C) 2004 American Institute of Physics.
Focal-plane-arrays and CMOS readout techniques of infrared imaging systems
(1997-08-01)
Hsieh, CC
;
Wu, CY
;
Jih, FW
;
Sun, TP
;
電子工程學系及電子研究所
A discussion of CMOS readout technologies fur infrared (IR) imaging systems is presented, First, the description of various types of IR detector materials and structures is given, The advances of detector fabrication technology and microelectronics process technology have led to the development of large format array of IR imaging detectors, For such large IR FPA's which is the critical component of the advanced infrared imaging system, general requirement and specifications are described, To support a good interface between FPA and downstream signal processing stage, both conventional and recently developed CMOS readout techniques are presented and discussed, Finally, future development directions including the smart focal plane concept are also introduced.
High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA
(1998-08-01)
Hsieh, CC
;
Wu, CY
;
Sun, TP
;
Jih, FW
;
Cherng, YT
A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called the buffered gate modulation input (BGMI) circuit, is proposed in this paper. Using the technique of unbalanced current mirror, the new BGMI circuit can achieve high charge sensitivity with adaptive current gain control and good immunity from threshold-voltage variations. Moreover, the readout dynamic range can be significantly increased by using the threshold-voltage-independent current-mode background suppression technique. To further improve the readout performance, switch current integration techniques, shared-buffer biasing technique, and dynamic charging output stage with the correlated double sampling circuit are also incorporated into the BGMI circuit, An experimental 128 x 128 BGMI readout chip has been designed and fabricated in 0.8 mu m double-poly-double-metal (DPDM) n-well CMOS technology, The measurement results of the fabricated readout chip under 77K and 5 V supply voltage have successfully verified both readout function and performance improvement. The fabricated chip has the maximum charge capacity of 9.5 x 10(7) electrons, the transimpedance of 2.5 x 10(9) Omega at 10 nA background current, and the active power dissipation of 40 mW, The uniformity of background suppression currents can be as high as 99%. Thus, high injection efficiency, high charge sensitivity, large dynamic range, large storage capacity, and low noise can be achieved in the BGMI circuit with the pixel size of 50 x 50 mu m(2), These advantageous characteristics make the BGMI circuit suitable for various IR FPA readout applications with a wide range of background currents.
Monophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablation
(2002-09-01)
Hsieh, CC
;
Wu, KH
;
Juang, JY
;
Uen, TM
;
Lin, JY
Single phase TiO2 thin films, of either rutile or anatase structure, have been prepared on SrTiO3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO2(00l) films were formed even when a rutile TiO2(110) substrate was used as a target. On the other hand, pure rutile TiO2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700 degreesC. The optimized deposition conditions for preparing TiN and TiO2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed. (C) 2002 American Institute of Physics.
RHEED in-situ monitored step edge diffusion during interrupted laser ablation epitaxy growth of SrTiO3
(2004-12-01)
Wang, TC
;
Lee, JY
;
Hsieh, CC
;
Juang, JY
;
Wu, KH
A series of investigations on the interrupted deposition of laser ablation strontium titanate epitaxy growth were conducted. RHEED intensity recovery curves at various temperatures show a near-quadratic power law dependence on annealing time. Combined with the evidence showing the intimate correlation between the step edge density and the RHEED intensity, a diffusion Arrhenius plot with the activation energy of 1.0 eV was obtained for the kinetics of step edge migration.
Superconducting YBa2Cu3O7 films grown on TiO2 buffer layers derived from various processes
(2001-11-01)
Wu, KH
;
Lin, PI
;
Hsieh, CC
;
Liu, SJ
;
Juang, JY
YBa2Cu3O7 (YBCO)/TiN and YBCO/TiO2 bilayer structures have been prepared on SrTiO3 (STO)(100) substrates by in situ pulsed laser deposition (PLD). The TiN films were originally intended to serve as the lower contact electrode for studying the c-axis transport properties of YBCO thin films. It was found that, under the optimum conditions of depositing YBCO thin films, the TiN(100) layer was oxidized and transformed into rutile TiO2(110) film. On the other hand, pure anatase TiO2(001) films were prepared by PLD using a rutile TiO2(110) substrate as the target. YBCO films grown on both phases of TiO2 films show virtually the same transport properties of typical good quality singlelayer YBCO films. Comparative studies of depositing YBCO films directly onto a de-sputtered TiO2 template commonly used in the selective epitaxial growth process have, however, resulted in formation of a nonsuperconducting YBCO top layer. Experiments including interfacial X-ray absorption spectroscopy for determining the possible interactions occurring at the YBCO and TiO2 interface are reported. (C) 2001 Elsevier Science B.V. All rights reserved.
The CAN-based synchronized structure for multi-axis motion control systems
(2005)
Hsieh, CC
;
Hsu, PL
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Basically, the controller area network (CAN) is an event-triggered control network. However, design of precise and safety-critical applications requires time-triggered protocols as the communication infrastructure to achieve hard real-time performance. Although the time-triggered controller area network (TTCAN) is suitable for synchronized applications, complexity and inflexibility of implementing the TTCAN cause limited applications in motion control. This paper implements CAN communication services on precise synchronized multi-axis motion control by introducing the event/time-triggered structure. A motion command estimator is implemented to estimate the lost messages caused by the network transmission rate. The proposed CAN-based motion control system achieves desirable performance even under a lower transmission rate with heavier message loading on the bus. Furthermore, the proposed event/time-triggered structure has been successfully applied to a DYNA MYTE 1007 CNC machine and experimental results indicate that tracking accuracy in different CAN transmission rate has been obtained.
The event-time triggered network control structure for CAN-based motion systems
(2005)
Hsieh, CC
;
Hsu, PL
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Design of precision and safety-critical applications usually adopts time-triggered protocols as the communication infrastructure to achieve real-time performance. Due to the event-triggered nature of the controller area network (CAN), some modified time-based protocols are proposed for the CAN bus like TT-CAN and FTT-CAN. This paper proposes a CAN-based motion control system by introducing the event-time structure. To overcome the drawback of losing messages caused by the network transmission rate for network control systems (NCS), a motion command estimator is adopted to estimate the lost commands or messages. Thus, the CAN-based motion control system achieves desired control performance even under lower transmission rate or heavier message loading on the bus. The proposed event-time structure has been successfully applied to a DYNA MTYE 1007 CNC machine. Experimental results indicate that precise tracking accuracy in different CAN transmission rate has been well maintained in the proposed motion control system.
The magneto-transport properties of epitaxial La0.7Sn0.3MnO3 manganite thin films
(2005-08-01)
Cheng, TY
;
Hsieh, CC
;
Juang, JY
;
Lin, JY
;
Wu, KH
Single-phase La0.7Sn0.3MnO3 (LSnMO) thin films were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition (PLD). The as-deposited films, though were insulating with no sign of insulator-metal transition (IMT), did display paramagnetic-ferromagnetic transition (PFT) around 150 K. Ex situ annealing of the films at 850 degrees C in 250 Torr oxygen for 4 h, nonetheless, not only significantly improves the crystallographic quality but also raises IMT and PFT at 315K and 320K, respectively. The manifestations of spin-glass-like behavior in both the as-deposited and postannealed films suggest that it could be intrinsic LSnMO, albeit transport properties can be drastically changed by the strain originating from large ion-size misfit between Sn and La and film/substrate epitaxial relation. The preliminary X-ray absorption spectroscopy shows signature of Mn3+/Mn2+ mixed-valence indicating that tetravalent Sn ions does result in electron-doping into the e, band of Mn. (c) 2005 Elsevier B.V. All rights reserved.