Browsing by Author "Hsieh, CR"
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Item type:Item, Optimal conditions for thermal fixing of volume holograms in Fe : LiNbO3 crystals(1999-10-10) ;Hsieh, CR ;Lin, SH ;Hsu, KY ;Hsieh, TCChiou, AWe analyze and compare two typical recording and thermal fixing procedures of a volume hologram in a Fe:LiNbO3 crystal (low-high-low procedure and high-low procedure). We consider the kinetics of the recording, compensating, and developing processes by taking into account the ratio of the conductivities between the protons and the electrons as a function of temperature. From the analysis the optimal environmental conditions tin terms of the fixing temperature and the compensation time) for each fixing procedure can be deduced for a crystal with given material parameters. (C) 1999 Optical Society of America.Item type:Item, Optimum conditions for thermal fixing of volume holograms in Fe : LiNbO3(1999) ;Lin, SAH ;Hsieh, CR ;Hsieh, TC ;Hsu, KY光電工程學系The kinetics of the recording, compensating, and developing processes in two typical thermal fixing procedures (L-H-L and H-L procedures) are analyzed. The optimum condition (in terms of the fixing temperature, compensation time and material parameters) for each fixing procedures are obtained under the boundary condition of short-circuit. Experimental results are shown which are in qualitative agreement with the theory in L-H-L procedure.