Browsing by Author "Hsieh, Chih-Ming"

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Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation
(2010)
Tsui, Bing-Yue
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Hsieh, Chih-Ming
;
Hung, Yu-Ren
;
Yang, York
;
Shen, Ryan
The thermal stability of nickel monosilicide (NiSi) is one of the important research topics in the area of nano-complementary metal oxide semiconductor. This paper reports the effect of germanium (Ge) ion implantation on the thermal stability of the NiSi/Si structure. High dose Ge ion implantation (>5x10(15) cm(-2)) can improve the thermal stability of the NiSi/Si structure. Ge ion implantation before NiSi formation results in a very smooth NiSi/Si interface due to Ge atom pileup at the NiSi/Si interface. This high concentration Ge layer reduces the interface energy so that the thermal stability can be improved. Both the phase-transformation temperature and agglomeration temperature are improved by 50-100 degrees C. The effects of Ge ion implantation on the NiSi-contacted n(+)-p and p(+)-n shallow junctions are also examined. Although fast Ni diffusion via the ion implantation induced defects is observed, better thermal stability can still be observed on the n(+)-p junction.
Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction
(2007)
Lin, Chia-Pin
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Tsui, Bing-Yue
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Hsieh, Chih-Ming
;
Huang, Chih-Feng
;
電子工程學系及電子研究所
Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction were fabricated. Symmetric threshold voltage was obtained by implant-to-silicide technique. Lateral growth rate and thermal stability of NiSi on SiO2 were investigated. Single silicide and low temperature process make the proposed process very promising in sub-45nm technology nodes.
Two-dimensional carrier profiling by Kelvin-probe force Microscopy
(2008-06-01)
Tsui, Bing-Yue
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Hsieh, Chih-Ming
;
Su, Po-Chih
;
Tzeng, Shien-Der
;
Gwo, Shangjr
This paper reports the two-dimensional (2-D) carrier/dopant profiling technique by Kelvin-probe force microscopy (KFM). Before surface potential was measured, a feedback control circuit was used to improve signal response speed. The effect of surface treatment on the contrast in surface potential images was studied. Then the correlation between surface potential difference measured by KFM and surface carrier/dopant concentration obtained by spreading resistance profiling, the capacitance-voltage method, and secondary ion mass spectroscopy analysis was established. On the basis of these results, the carrier depth profiling of a p-n junction and the detection of a p-n junction array with small pitch have been successfully demonstrated.
Vision-based Nighttime Vehicle Detection and Range Estimation for Driver Assistance
(2008)
Chen, Yen-Lin
;
Lin, Chuan-Tsai
;
Fan, Chung-Jui
;
Hsieh, Chih-Ming
;
Wu, Bing-Fei
This paper presents a real-time vision system for assisting driver during nighttime driving. The proposed system provides the following features: 1) Effectively detection and tracking of oncoming and preceding vehicles based on image segmentation and pattern analysis techniques. 2) Robust and adaptive vehicle detection under various illuminated conditions at nighttime urban environments benefited by a novel automatic object segmentation scheme. 3) Providing beneficial information for assisting the driver to perceive surrounding traffic conditions outside the car during nighttime driving. 4) Providing a versatile control strategy for in-vehicle facilities of the autonomous vehicles. 5) Offering real-time traffic event-driven video surveillance machinery for recording evidences of possible traffic accidents. Experimental results demonstrate the feasibility and effectiveness of the proposed system on nighttime driver assistance issues.